中文摘要
本项目利用气相沉积法和湿化学法、磁控溅射等相结合，在硅衬底（或锗衬底）上成功地制备不同形貌和尺寸的一维硒化锌/锗（ZnSe/Ge）异质结纳米结构和ZnSe纳米结构以及掺杂ZnSe纳米结构，研究其生长机理,通过控制工艺，制备出ZnSe纳米线阵列；在此基础上，将该方法应用到其它II-VI及II-VI/Ge异质结纳米结构，成果制备出多种形貌的CdS纳米结构，CdS/SiO2纳米线，CdS/Ge-SiO2芯-壳纳米线，CdSe/Ge异质结纳米线、CdSe/Ge/CdSe异质结纳米线，ZnSe/GeSe等级异质结纳米线，Ge/GeSe异质结纳米线，IV掺杂II-VI纳米线，Cd2SiS4/SiO2异质结纳米线阵列以及SiO2网状纳米带；系统研究了II-VI纳米结构的荧光特性和尺度、结构、形貌以及生长条件的关系；以及掺杂II-VI纳米线的荧光和电输运特性，发现IV掺杂II-VI纳米线呈现p型导电性。
英文摘要
In this proposal, one dimensional ZnSe/Ge heterostructure, undoped and doped ZnSe nanostructured with various morphologies and sizes and ZnSe nanowire arrays were sucessfully grown on the silicon substrates by vapor phase deposition, wetting chemical route and magnetron sputter-deposition combining with plasma-activates nitrogen. The growth methanism of these nanostructures was investigated. We also develop this method and apply to fabricated other II-VI and II-VI/Ge nanostrucutres, such as various morphology CdS nanostructures, CdS/SiO2nanowires, CdS/Ge-SiO2 core-shell nanowires, CdSe/Ge heterostrucutre nanowires, CdSe/Ge/CdSe tri-axial nanowires,ZnSe/GeSe heterostrucutre nanowires,Ge/GeSe heterostrucutre nanowires,IV doped II-VI nanowires, Cd2SiS4/SiO2 heterostructure nanowire arrays and SiO2 net-like nanoribbons. The relations between the strcture, morphology and growth conditions and luminescence properties of II-VI based nanostructure were measured by temperature dependent PL spectra. The electronic transport and luminecence properties of doped II-VI was also investigated. IV doped II-VI was present p-type conductivity.
结题摘要
本项目利用气相沉积法和湿化学法、磁控溅射等相结合，在硅衬底（或锗衬底）上成功地制备不同形貌和尺寸的一维硒化锌/锗（ZnSe/Ge）异质结纳米结构和ZnSe纳米结构以及掺杂ZnSe纳米结构，研究其生长机理,通过控制工艺，制备出ZnSe纳米线阵列；在此基础上，将该方法应用到其它II-VI及II-VI/Ge异质结纳米结构，成果制备出多种形貌的CdS纳米结构，CdS/SiO2纳米线，CdS/Ge-SiO2芯-壳纳米线，CdSe/Ge异质结纳米线、CdSe/Ge/CdSe异质结纳米线，ZnSe/GeSe等级异质结纳米线，Ge/GeSe异质结纳米线，IV掺杂II-VI纳米线，Cd2SiS4/SiO2异质结纳米线阵列以及SiO2网状纳米带；系统研究了II-VI纳米结构的荧光特性和尺度、结构、形貌以及生长条件的关系；以及掺杂II-VI纳米线的荧光和电输运特性，发现IV掺杂II-VI纳米线呈现p型导电性。